NID5003N - Single N-Channel DPAK

Features

Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain.
to.
Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate.
to.
Source Clamp. Features http://onsemi. com VDSS (Clamped) 42 V ID MAX (Limited) 20 A.
RDS.

ON Semiconductor

Datasheet Details

Part number	NID5003N
Manufacturer	ON Semiconductor
File Size	79.90 KB
Description	Single N-Channel DPAK
Datasheet	NID5003N Datasheet
Additional preview pages of the NID5003N datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NID5003N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 20 A, Single N−Channel, DPAK HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features http://onsemi.

Published: Jan 17, 2007 |