Datasheet4U Logo Datasheet4U.com

NID6002N - Self-Protected FET

Features

  • Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain.
  • to.
  • Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate.
  • to.
  • Source Clamp. Features.
  • Short Circuit Protection/Current Limit.
  • Thermal Sh.

📥 Download Datasheet

Datasheet preview – NID6002N

Datasheet Details

Part number NID6002N
Manufacturer ON Semiconductor
File Size 154.36 KB
Description Self-Protected FET
Datasheet download datasheet NID6002N Datasheet
Additional preview pages of the NID6002N datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NID6002N Preferred Device Self−Protected FET with Temperature and Current Limit 65 V, 6.5 A, Single N−Channel, DPAK HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
Published: |