NID9N05ACL Description
NID9N05ACL, NID9N05BCL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation.
NID9N05ACL Key Features
- Diode Clamp Between Gate and Source
- ESD Protection
- HBM 5000 V
- Active Over-Voltage Gate to Drain Clamp
- Scalable to Lower or Higher RDS(on)
- Internal Series Gate Resistance
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS