NID9N05CL - Power MOSFET

Features

VDSS (Clamped) 52 V RDS(ON) TYP 90 mΩ ID MAX (Limited) 9.0 A Drain (Pins 2, 4).
Diode Clamp Between Gate and Source ESD Protection.
HBM 5000 V Active Over.
Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance.

ON Semiconductor

Datasheet Details

Part number	NID9N05CL
Manufacturer	ON Semiconductor
File Size	99.30 KB
Description	Power MOSFET
Datasheet	NID9N05CL Datasheet
Additional preview pages of the NID9N05CL datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features VDSS (Clamped) 52 V RDS(ON) TYP 90 mΩ ID MAX (Limited) 9.

Published: Jan 17, 2007 |