NID9N05CL Description
NID9N05CL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a DPAK Package http://onsemi. Benefits High Energy Capability for Inductive Loads Low Switching Noise Generation.
NID9N05CL Key Features
- Diode Clamp Between Gate and Source ESD Protection
- HBM 5000 V Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance