NSR15ADXV6T1 Datasheet | onsemi

Features - - - - Low Capacitance (<1.0 p F) Low VF (390 m V Typical @ 1.0 m A) Low VFD (1.0 m V Typical @ 1.0 m A) These are Pb- Free Devices RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 m A Benefits - Reduced Parasitic Losses - Accurate Signal Measurement MAXIMUM RATINGS Rating Peak Reverse Voltage Forward Current Operating and Storage Temperature Range ESD Rating: Symbol VR IF TJ, Tstg Max 15 30 - 65 to +150 Unit V m A °C 6 1 MARKING DIAGRAM Class 1 per Human Body Model Class A per Machine Model Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 5RD SOT- 563 CASE 463A 5R = Specific Device Code D = Date Code ORDERING INFORMATION Device NSR15ADXV6T1 NSR15ADXV6T5 Package SOT- 563 SOT- 563 Shipping† 4 mm pitch 4000 / Tape & Reel 2 mm pitch 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2004 June, 2004 - Rev. 3 Publication Order Number: NSR15ADXV6T1/D NSR15ADXV6T1, NSR15ADXV6T5 ELECTRICAL CHARACTERISTICS Characteristic Breakdown Voltage (IR = 10 m A) Reverse Leakage (VR = 1.0 V) Forward Voltage (IF = 1.0 m A) Forward Voltage (IF = 10 m A) Delta VF Capacitance (VF = 0 V, f = 1.0 MHz) Symbol VBR IR VF1 VF2 DVF CT Min 15 - - - - - Typ 20 2 390 530 1 0.8 Max - 50 415 680 15 1 Unit V n A m V m V m V p F 100 IF, FORWARD CURRENT (m A) 100 k IR, REVERSE CURRENT (n A) 10 k 10 75°C 1...