NSR15DW1 Datasheet | onsemi

Features - - - - Low Capacitance (<1 p F) Low VF (390 m V typical @ 1 m A) Low VFD (1 m V typical @ 1 m A) Pb- Free Package is Available http://onsemi. Benefits RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 m A 6 5 4 - Reduced Parasitic Losses - Accurate Signal Measurement MAXIMUM RATINGS Rating Peak Reverse Voltage Forward Current Operating and Storage Temperature Range ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model Symbol VR IF TJ, Tstg Max 15 30 - 65 to +150 Unit V m A °C THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction- to- Ambient Symbol Rq JA Value 500 Unit °C/W SC- 88 CASE 419B STYLE 21 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1 R5 M G R5 M G G = Specific Device Code = Date Code = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSR15DW1T1 NSR15DW1T1G Package SC- 88 SC- 88 (Pb- Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2006 May, 2006 - Rev. 2 Publication Order Number: NSR15DW1/D ELECTRICAL CHARACTERISTICS Characteristic Breakdown Voltage (IR = 10 m A) Reverse Leakage (VR = 1 V) Forward Voltage (IF = 1 m A) Forward Voltage (IF = 10 m A) Delta VF (IF = 1 m A, All Diodes) Capacitance (VF = 0 V, f = 1 MHz) Symbol VBR IR VF1 VF2 DVF CT Min 15 - - - - - Typ 20 2 390 530 1 0.8 Max - 50 415 680 15 1 Unit V n A m V m V m V p F 100 IF, FORWARD CURRENT (m A) 100 k IR, REVERSE CURRENT (n...