NSR15TW1 Datasheet | onsemi

Features : - Low Capacitance (<1 p F) - Low VF (390 m V typical @ 1 m A) - Low VFD (1 m V typical @ 1 m A) Benefits: http://onsemi. - Reduced Parasitic Losses - Accurate Signal Measurement MAXIMUM RATINGS Rating Peak Reverse Voltage Forward Current Operating and Storage Temperature Range ESD Rating: Class 1 per Human Body Model ESD Rating: Class A per Machine Model Symbol VR IF TJ, Tstg Max 15 30 - 65 to +150 Unit V m A °C RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 m A THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance - Junction to Ambient Symbol Rq JA Value 500 Unit °C/W 1 2 3 SC- 88 CASE 419B STYLE 15 MARKING DIAGRAM OZ M OZ = Specific Device Code M = Date Code ORDERING INFORMATION Device NSR15TW1T2 Package SC- 88 Shipping 3000/Tape & Reel © Semiconductor ponents Industries, LLC, 2002 February, 2002 - Rev. 1 Publication Order Number: NSR15TW1/D ELECTRICAL CHARACTERISTICS Characteristic Breakdown Voltage (IR = 10 m A) Reverse Leakage (VR = 1 V) Forward Voltage (IF = 1 m A) Forward Voltage (IF = 10 m A) Delta VF (IF = 1 m A, All Diodes) Capacitance (VF = 0 V, f = 1 MHz) Symbol VBR IR VF1 VF2 DVF CT Min 15 - - - - - Typ 20 2 390 530 1 0.8...