NTD4813N Datasheet | onsemi

NTD4813N Power MOSFET Features 30 V, 40 A, Single N-Channel, DPAK/IPAK - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS 30 V http://onsemi. RDS(ON) MAX 13 mΩ @ 10 V 24 mΩ @ 4.5 V D 40 A ID MAX Applications - CPU Power Delivery - DC--DC Converters - High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) Power Dissipation RθJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmax Pkg TJ, TSTG IS d V/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 1.94 7.6 5.9 1.27 40 31 35.3 90 35 --55 to +175 29 6 72 W A A °C A W A W A Unit V V A G S N-CHANNEL MOSFET 4 4 1 2 1 4 CASE 369AA DPAK (Bent Lead) STYLE 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG 4 Drain YWW 48 13NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt V/ns m J Single Pulse Drain--to--Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 12 Apk, L = 1.0 m H, RG = 25 Ω) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW...