NTD4813NH
NTD4813NH is Power MOSFET manufactured by onsemi.
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NTD4813NH Power MOSFET
30 V, 40 A, Single N- Channel, DPAK/IPAK
Features
- -
- -
- Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb- Free Devices http://onsemi.
V(BR)DSS 30 V
RDS(ON) MAX 13 m W @ 10 V 25.9 m W @ 4.5 V D
ID MAX 40 A
Applications
- CPU Power Delivery
- DC- DC Converters
- High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmax Pkg TJ, TSTG IS d V/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.0 7.0 Unit V V A
S N- CHANNEL MOSFET 4 4
1.94 7.6 5.9 1.27 40 31 35.3 90 35
- 55 to +175 29 6 44.4
W A 1 2 3 W A
2 3
DPAK CASE 369C (Bent Lead) STYLE 2
3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK)
W A A °C A V/ns m J 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4813NH G = Year = Work Week = Device Code = Pb- Free Package 4 Drain YWW 48 13NHG
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain YWW 48 13NHG 4 Drain YWW 48 13NHG
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt
Single Pulse Drain- to- Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 17.2 Apk, L = 0.3 m H, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended...
