NTD4815NH Datasheet | onsemi

.. NTD4815NH Power MOSFET 30 V, 35 A, Single N- Channel, DPAK/IPAK Features - - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb- Free Devices http://onsemi. V(BR)DSS 30 V RDS(ON) MAX 15 m W @ 10 V 27.7 m W @ 4.5 V D 35 A ID MAX Applications - CPU Power Delivery - DC- DC Converters - High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current tp=10ms TA = 25°C TA = 85°C TA = 25°C TA = 25°C Steady State TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmax Pkg TJ, TSTG IS d V/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 8.5 6.5 1.92 6.9 5.3 1.26 35 27 32.6 87 35 - 55 to +175 27 6 35.6 W A A °C A V/ns m J 4 Drain YWW 48 15NHG W A W 1 2 A 3 DPAK CASE 369C (Bent Lead) STYLE 2 Unit V V A G S N- CHANNEL MOSFET 4 4 4 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 15NHG 4 Drain YWW 48 15NHG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt Single Pulse Drain- to- Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 15.4 Apk, L = 0.3 m H, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y = Year WW = Work Week 4815NH= Device Code G = Pb- Free Package °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to...