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NTD5862N, NTP5862N
MOSFET – Power, N-Channel
60 V, 98 A, 5.7 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms)
VGS
±30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
98
A
69
115
W
Pulsed Drain Current
tp = 10 ms
IDM
335
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (L = 0.
NTD5862N Datasheet
