NTD5862N
NTD5862N is N-Channel Power MOSFET manufactured by onsemi.
NTD5862N, NTP5862N
MOSFET
- Power, N-Channel
60 V, 98 A, 5.7 m W
Features
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- These Devices are Pb- Free, Halogen Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- Continuous
±20
Gate- to- Source Voltage
- Non- Repetitive (tp < 10 ms)
±30
Continuous Drain Current (Rq JC) (Note 1)
Power Dissipation (Rq JC)
TC = 25°C
Steady TC = 100°C
State
TC = 25°C
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature TJ, Tstg
- 55 to °C 175
Source Current (Body...
