NTD5865NL Datasheet | onsemi

NTD5865NL N- Channel Power MOSFET 60 V, 40 A, 16 mΩ Features - - - - - .. http://onsemi. V(BR)DSS 60 V Value 60 20 30 40 26 PD IDM TJ, Tstg IS (L = 0.1 m H) EAS IAS TL 52 137 -- 55 to 150 40 36 27 260 W A C 4 A m J A C 3 DPAK CASE 369AA (Surface Mount) STYLE 2 1 2 1 2 Unit V V V A RDS(on) MAX 16 mΩ @ 10 V 19 mΩ @ 4.5 V ID MAX 40 A Low Gate Charge Fast Switching High Current Capability 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are Ro HS pliant Parameter Symbol VDSS VGS VGS TC = 25C Steady State TC = 100C TC = 25C ID MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Drain--to--Source Voltage Gate--to--Source Voltage -- Continuous Gate--to--Source Voltage -- Non--Repetitive (tp < 10 ms) Continuous Drain Current (RθJC) Power Dissipation (RθJC) Pulsed Drain Current G S N-CHANNEL MOSFET 4 tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain--to--Source Avalanche Energy Lead Temperature for Soldering Purposes (1/8- from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 3 IPAK CASE 369D (Straight Lead) STYLE 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--Ambient -- Steady State (Note 1) Symbol RθJC RθJA Value 2.4 42 Unit C/W MARKING DIAGRAMS & PIN ASSIGNMENT 4 Drain YWW 58 65NLG 4 Drain 1. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 2 1 Drain 3 Gate Source 1 2 3 Gate Drain Source Y = Year WW = Work Week 5865NL = Device Code G = Pb--Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.  Semiconductor ponents Industries,...