NTD5865N
NTD5865N is N-Channel Power MOSFET manufactured by onsemi.
N-Channel Power MOSFET 60 V, 43 A, 18 m W
Features
- Low Gate Charge
- Fast Switching
- High Current Capability
- 100% Avalanche Tested
- These Devices are Pb- Free, Halogen Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
- Continuous
Gate- to- Source Voltage
- Non- Repetitive (tp < 10 ms)
Continuous Drain Current (Rq JC)
Power Dissipation (Rq JC)
Steady State
TC = 25°C TC = 100°C TC = 25°C
Pulsed Drain Current tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS VGS
IDM TJ, Tstg
60 ±20 ±30
43 31 71
- 55 to
A °C
Source Current (Body Diode)
IS 43...
