Datasheet Summary
NTGD3148N Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
- ăLow Threshold Levels, VGS(th) < 1.5 V
- ăLow Gate Charge (3.8 nC)
- ăLeading Edge Trench Technology of Low RDS(on)
- ăHigh Power and Current Handling Capability
- ăThis is a Pb-Free Device
Applications http://onsemi. N-CHANNEL MOSFET
V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ID Max 3.5 A
- ăDC-DC Converters (Buck and Boost Circuits)
- ăLow Side Load Switch
- ăOptimized for Battery and Load Management Applications in
Portable Equipment Like Cell Phones, DSCs, Media Player, Etc
- ăBattery Charging and Protection Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain-to-Source Voltage...