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NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
• • • • • •
Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
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V(BR)DSS N−Ch 20 V P−Ch −20 V RDS(on) MAX 60 mW @ 4.5 V 90 mW @ 2.5 V 110 mW @ 4.5 V 145 mW @ 2.5 V ID MAX (Note 1) 3.5 A
Applications
−2.
NTGD3149C Datasheet
