Datasheet Summary
NTGD3149C plementary, 20 V, +3.5/- 2.7 A, TSOP- 6 Dual
Features
Power MOSFET
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- - plementary N- Channel and P- Channel MOSFET Small Size (3 x 3 mm) Dual TSOP- 6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb- Free Device http://onsemi.
V(BR)DSS N- Ch 20 V P- Ch
- 20 V RDS(on) MAX 60 mW @ 4.5 V 90 mW @ 2.5 V 110 mW @ 4.5 V 145 mW @ 2.5 V ID MAX (Note 1) 3.5 A
Applications
- 2.7 A
- DC- DC Conversion Circuits
- Load/Power Switching with Level Shift
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to-...