Datasheet Summary
NTGD4161P Power MOSFET
- 30 V,
- 2.3 A, Dual P- Channel, TSOP- 6
Features
- -
- -
- Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb- Free Device http://onsemi.
V(BR)DSS
- 30 V
RDS(on) Max 160 mW @
- 10 V 280 mW @
- 4.5 V
Applications
- Load Switch
- Battery Protection
- Portable Devices Like PDAs, Cellular Phones and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current...