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NTGD4167C - Power MOSFET

Features

  • Complementary N.
  • Channel and P.
  • Channel MOSFET.
  • Small Size (3 x 3 mm) Dual TSOP.
  • 6 Package.
  • Leading Edge Trench Technology for Low On Resistance.
  • Reduced Gate Charge to Improve Switching Response.
  • Independently Connected Devices to Provide Design Flexibility.
  • This is a Pb.
  • Free Device.

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Datasheet preview – NTGD4167C

Datasheet Details

Part number NTGD4167C
Manufacturer onsemi
File Size 142.98 KB
Description Power MOSFET
Datasheet download datasheet NTGD4167C Datasheet
Additional preview pages of the NTGD4167C datasheet.

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Full PDF Text Transcription

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NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 30 V, +2.9/-2.
Published: |