NTMD5836NL
NTMD5836NL is Power MOSFET manufactured by onsemi.
NTMD5836NL Power MOSFET
40 V, Dual N- Channel, SOIC- 8
Features
- -
- -
- Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
ID Max (Notes 1 and 2) 11 A G1 http://onsemi.
N- Channel 1 D1
N- Channel 2 D2
V(BR)DSS Channel 1 40 V
RDS(on) Max 12 m W @ 10 V 16 m W @ 4.5 V
G2 S1 S2
Channel 2
40 V
25 m W @ 10 V 30.8 m W @ 4.5 V
6.5 A
1. Surface- mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Only selected channel is been powered 1W applied on channel 1: TJ = 1 W
- 85°C/W + 25°C = 110°C
MARKING DIAGRAM- AND PIN ASSIGNMENT
8 1 SOIC- 8 CASE 751 D1 D1 D2 D2 8 5836NL AYWW G G 1 S1 G1 S2 G2 A Y WW G = Assembly Location = Year = Work Week = Pb- Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device NTMD5836NLR2G Package SOIC- 8 (Pb- Free) Shipping† 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D
© Semiconductor ponents Industries, LLC, 2011 ..net March, 2011
- Rev. 0
Publication Order Number: NTMD5836NL/D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current RθJA (Notes 3 and 4) Power Dissipation RθJA (Notes 3 and 4) Continuous Drain Current RθJA (Notes 3 and 4) Power Dissipation RθJA (Notes 3 and 4) Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 m H) Lead Temperature for Soldering Purposes (1/8” from case for 10s) tp = 10 ms t v 10s Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Ch 1 40 $20 9.0 7.2 1.5 0.9 11 8.6 2.1 1.3 43 Ch 2...
