NTMFS4943N
NTMFS4943N is Power MOSFET manufactured by onsemi.
Features
30 V, 41 A, Single N- Channel, SO- 8 FL
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Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
.. http://onsemi.
V(BR)DSS 30 V RDS(ON) MAX 7.2 m W @ 10 V 11 m W @ 4.5 V D (5,6) ID MAX 41 A
Applications
- CPU Power Delivery
- DC- DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA ≤ 10 s (Note 1) Power Dissipation Rq JA ≤ 10 s (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C PD IDM IDmax TJ, TSTG IS d V/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 14 8.7 2.6 23 14.3 6.83 W W A Unit V V A G (4)
S (1,2,3) N- CHANNEL MOSFET
MARKING DIAGRAM
8.3 5.2 0.91 41 26 22.3 125 100
- 55 to +150 20 8.0 31
SO- 8 FLAT LEAD CASE 488AA STYLE 1
4943N AYWWG G D
W A A °C A V/ns m J
A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location)
Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT
ORDERING INFORMATION
Device NTMFS4943NT1G NTMFS4943NT3G Package SO- 8 FL (Pb- Free) SO- 8 FL (Pb- Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel
Single Pulse Drain- to- Source Avalanche Energy TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 25 Apk, L = 0.1 m H, RG = 25 W Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress...
