NTMFS4945N Datasheet | onsemi

Features 30 V, 35 A, Single N- Channel, SO- 8 FL - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant .. http://onsemi. V(BR)DSS 30 V RDS(ON) MAX 9.0 m W @ 10 V 13 m W @ 4.5 V D (5,6) Value 30 ±20 12.4 7.9 PD ID PD ID PD ID PD IDM IDmax TJ, TSTG IS d V/dt EAS 2.54 20 12.6 6.5 7.4 4.7 0.91 35 22 19.8 104 100 - 55 to +150 18 8.0 26.5 W A A °C A V/ns m J NTMFS4945NT3G 260 °C W A W A S S S G W A S (1,2,3) N- CHANNEL MOSFET Unit V V A G (4) ID MAX 35 A Applications - CPU Power Delivery - DC- DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA ≤ 10 s (Note 1) Power Dissipation Rq JA ≤ 10 s (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) Power Dissipation Rq JC (Note 1) Pulsed Drain Current Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain- to- Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 23 Apk, L = 0.1 m H, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC =100°C TC = 25°C TA = 25°C, tp = 10 ms TA = 25°C Symbol VDSS VGS ID MARKING DIAGRAM SO- 8 FLAT LEAD CASE 488AA STYLE 1 4945N AYWWG G D A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMFS4945NT1G Package SO- 8 FL (Pb- Free) SO- 8 FL (Pb- Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings...