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NTMS4800N
Power MOSFET
30 V, 8 A, N−Channel, SOIC−8
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • SOIC−8 Surface Mount Package Saves Board Space • This is a Pb−Free Device
Applications
• DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VGS
TA = 25°C
ID
TA = 70°C
±20 V
6.4
A
5.1
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
1.29 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 70°C
4.9
A
3.9
Power Dissipation RqJA State TA = 25°C
PD
0.
NTMS4800N Datasheet
