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NTMS4801N
MOSFET – Power, N-Channel, SO-8
30 V, 12 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • This is a Pb−Free Device
Applications
• DC−DC Converters • Synchronous MOSFET • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
9.9
A
TA = 70°C
7.9
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
1.41 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 70°C
Power Dissipation RqJA State TA = 25°C
PD
(Note 2)
7.5
A
6.0
0.
NTMS4801N Datasheet
