NTMS4807N - Power MOSFET

Features

30 V, 14.8 A, N-Channel, SO-8.
ăLow RDS(on) to Minimize Conduction Losses.
ăLow Capacitance to Minimize Driver Losses.
ăOptimized Gate Charge to Minimize Switching Losses.
ăThis is a Pb-Free Device.

ON Semiconductor

Datasheet Details

Part number	NTMS4807N
Manufacturer	ON Semiconductor
File Size	113.89 KB
Description	Power MOSFET
Datasheet	NTMS4807N Datasheet
Additional preview pages of the NTMS4807N datasheet.

📁 Similar Datasheet

NTMS4101PR2G - P-Channel 20V MOSFET (VBsemi)
NTMS10P02R2 - P-Channel MOSFET (ETC)
NTM164M21 - LCD (ETC)
NTM164M21C - LCD (ETC)
NTM88H025S - Tire pressure monitor sensor (NXP)
NTM88H055S - Tire pressure monitor sensor (NXP)
NTM88H065S - Tire pressure monitor sensor (NXP)
NTM88H075S - Tire pressure monitor sensor (NXP)
NTM88H125S - Tire pressure monitor sensor (NXP)
NTM88H135S - Tire pressure monitor sensor (NXP)

Other Datasheets by ON Semiconductor

NTMS4800N - Power MOSFET
NTMS4801N - N-Channel Power MOSFET
NTMS4802N - Power MOSFET
NTMS4816N - Power MOSFET
NTMS4840N - Power MOSFET
NTMS4872N - Power MOSFET
NTMS4873NF - Power MOSFET
NTMS4107N - Power MOSFET

Full PDF Text Transcription

Click to expand full text

NTMS4807N Power MOSFET Features 30 V, 14.8 A, N-Channel, SO-8 •ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device Applications V(BR)DSS 30 V 7.5 mW @ 4.5 V www.DataSheet4U.com http://onsemi.com RDS(ON) MAX 6.1 mW @ 10 V 14.

Published: Feb 16, 2011 |