The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTMS4807N
MOSFET – Power, N-Channel, SO-8
30 V, 14.8 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • This is a Pb−Free Device
Applications
• Disk Drives • DC−DC Converters • Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1)
Power Dissipation RqJA (Note 1)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
12.2 A
TA = 70°C
9.8
TA = 25°C
PD
1.55 W
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 70°C
9.1
A
7.3
Power Dissipation RqJA State TA = 25°C
PD
0.86 W
(Note 2)
Continuous Drain Current RqJA, t v 10 s (Note 1)
TA = 25°C
ID
14.
NTMS4807N Datasheet
