NTTFSSH4D0N08XL
NTTFSSH4D0N08XL is N-Channel Power MOSFET manufactured by onsemi.
Features
- Advanced Source- Down Package Technology (3.3 x 3.3 mm) with
Excellent Thermal Conduction
- Ultra Low RDS(on) to Improve System Efficiency
- Low QG and Capacitance to Minimize Driving and Switching Losses
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Applications
- High Switching Frequency DC- DC Conversion
- Synchronous Rectifier
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current (Note 1)
TC = 25°C
TC = 100°C
Power Dissipation (Notes 1, 2)
TC = 25°C
102 W
Pulsed Drain Current
TC = 25°C,
IDM tp = 10 ms
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to °C +175
Continuous Source- Drain Current (Body Diode)
Single Pulse Avalanche Energy (IPK = 40 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10...
