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NTTFSSH4D0N08XL - N-Channel Power MOSFET

Key Features

  • Advanced Source.
  • Down Package Technology (3.3 x 3.3 mm) with Excellent Thermal Conduction.
  • Ultra Low RDS(on) to Improve System Efficiency.
  • Low QG and Capacitance to Minimize Driving and Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, Source Down, WDFN9 80 V, 3.6 mW, 107 A Product Preview NTTFSSH4D0N08XL Features • Advanced Source−Down Package Technology (3.3 x 3.