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NTD4810N, NVD4810N
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4810N • These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (RqJA) (Note 1)
Power Dissipation (RqJA) (Note 1) Continuous Drain Current (RqJA) (Note 2)
Power Dissipation (RqJA) (Note 2) Continuous Drain (CNuortreen1t)(RqJC)
Steady State
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
Power D
NVD4810N Datasheet
