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NVD4813NH - Power MOSFET

Key Features

  • 30 V, 40 A, Single N.
  • Channel, DPAK/IPAK.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC.
  • Q101 Qualified and PPAP Capable.
  • NVD4813NH These Devices are Pb.
  • Free and are RoHS Compliant http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.5 V D ID MAX 40 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N−Channel, DPAK/IPAK • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q101 Qualified and PPAP Capable − NVD4813NH These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13 mW @ 10 V 25.9 mW @ 4.