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NTD4815N, NVD4815N
MOSFET – Power, Single, N-Channel, DPAK/IPAK
30 V, 35 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery • DC−DC Converters • High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
30
Gate−to−Source Voltage
VGS
±20
Continuous Drain Current RqJA (Note 1)
TA = 25°C
ID
8.5
TA = 85°C
6.5
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
1.
NVD4815N Datasheet
