NVD5862N
NVD5862N is Power MOSFET manufactured by onsemi.
Power MOSFET
60 V, 5.7 mW, 98 A, Single N- Channel
Features
- Low RDS(on) to Minimize Conduction Losses
- High Current Capability
- Avalanche Energy Specified
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
"20 V
Continuous Drain Cur-
TC = 25°C
ID rent RqJC (Note 1)
Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
(Note 1)
TC = 100°C
115 W
Continuous Drain Cur-
TA = 25°C
ID rent RqJA (Notes 1 & 2) Steady TA = 100°C
Power...
