NVD5862N Description
NVD5862N Power MOSFET 60 V, 5.7 mW, 98 A, Single N−Channel.
NVD5862N Key Features
- Low RDS(on) to Minimize Conduction Losses
- High Current Capability
- Avalanche Energy Specified
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C 175
- Steady State (Drain)
- Steady State (Note 2) RqJA
- The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bo
- Rev. 3