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NVD5865NL
Power MOSFET
60 V, 46 A, 16 mW, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation (Note 1)
RqJC
Continuous Drain Cur-
rent 3)
RqJA
(Notes
1,
2
&
Power (Notes
Dissipation 1 & 2)
RqJA
Pulsed Drain Current Current Limited by Package (Note 3)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C TA = 25°C
Steady TA = 100°C State TA = 25°C
TA = 100°C TA = 25°C, tp = 10 ms
TA = 25°C
VDSS VGS ID
PD
ID
PD
IDM I
NVD5865NL Datasheet
