NVD5867NL Overview
NVD5867NL Power MOSFET 60 V, 22 A, 39 mW, Single N−Channel.
NVD5867NL Key Features
- Low RDS(on) to Minimize Conduction Losses
- High Current Capability
- Avalanche Energy Specified
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C 175
- Steady State (Note 2) RqJA
- Rev. 2