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NVD5867NL
Power MOSFET
60 V, 22 A, 39 mW, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2 & 3)
Power Dissipation RqJA (Notes 1 & 2)
Pulsed Drain Current Current Limited by Package (Note 3)
Steady State
TC = 25°C TC = 100°C TC = 25°C TC = 100°C TA = 25°C
Steady TA = 100°C State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS VGS ID
PD
ID
PD
IDM
NVD5867NL Datasheet
