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TIG067SS - Single N-Channel IGBT

Key Features

  • Low-saturation Voltage.
  • Enhancement Type.
  • High Speed Switching.
  • 4.0V Drive.
  • Built-in Gate-to-Emitter Protection Diode.
  • Pb-Free, Halogen Free and RoHS Compliance.

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Datasheet Details

Part number TIG067SS
Manufacturer onsemi
File Size 797.98 KB
Description Single N-Channel IGBT
Datasheet download datasheet TIG067SS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIG067SS IGBT 400V, 150A, VCE(sat);3.8V Single N-Channel www.onsemi.com Features • Low-saturation Voltage • Enhancement Type • High Speed Switching • 4.0V Drive • Built-in Gate-to-Emitter Protection Diode • Pb-Free, Halogen Free and RoHS Compliance Applications • Light-controlling Flash Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage (DC) Collector-to-Emitter Voltage (Pulse) Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Allowable Power Dissipation Channel Temperature VCES VCESP VGES VGESP ICP dv / dt PD Tch Storage Temperature Tstg Conditions PW≤1ms PW≤1ms CM=600μF VCE≤320V, starting Tch=25°C When mounted on FR4 substrate (11,680mm2×1.