FDC642P-F085 Description
MOSFET P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P.
FDC642P-F085 Key Features
- Typ RDS(on) = 52.5 mW at VGS = -4.5 V, ID = -4 A
- Typ RDS(on) = 75.3 mW at VGS = -2.5 V, ID = -3.2 A
- Fast Switching Speed
- Low Gate Charge (6.9 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- AEC-Q101 Qualified and PPAP Capable
- This Device is Pb-Free and is RoHS pliant