FDC658AP-G Description
This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process. It has been optimized for battery power management applications.
FDC658AP-G Key Features
- Max RDS(on) = 50 mW @ VGS = -10 V, ID = -4 A
- Max RDS(on) = 75 mW @ VGS = -4.5 V, ID = -3.4 A
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- Pb-Free, Halide Free and RoHS pliant