FDC8601 Description
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.
FDC8601 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 109 mW at VGS = 10 V, ID = 2.7 A
- Max RDS(on) = 176 mW at VGS = 6 V, ID = 2.1 A
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant