FDD6N50TM-F085 Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies...
FDD6N50TM-F085 Key Features
- 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
- Low gate charge ( typical 12.8 nC)
- Low Crss ( typical 9 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS pliant