FDD86069-F085 Description
MOSFET - Power, Single N-Channel 100 V, 10.5 mW, 51 A FDD86069-F085.
FDD86069-F085 Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR-Free and are RoHS
- Steady State
- Steady State (Note 2)
- Rev. 0