FDMC010N08LC Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC010N08LC Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 18.4 mW at VGS = 4.5 V, ID = 13 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS