FDMC012N03 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC012N03 Key Features
- Max RDS(on) = 1.23 mW at VGS = 10 V, ID = 35 A
- Max RDS(on) = 1.46 mW at VGS = 4.5 V, ID = 32 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead-Free
- This Device is Pb-Free, Halide Free and RoHS pliant