FDMC86262P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
FDMC86262P Key Features
- Max rDS(on) = 307 mW at VGS = -10 V, ID = -2 A
- Max rDS(on) = 356 mW at VGS = -6 V, ID = -1.8 A
- Very Low rDS(on) Mid Voltage P-Channel Silicon Technology
- Optimised for Fast Switching