FDS6680A Description
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6680A Key Features
- 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V
- Ultra-low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability