Part FGH75T65UPD
Description IGBT
Manufacturer onsemi
Size 598.05 KB
onsemi
FGH75T65UPD

Overview

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 75 A
  • 100% of Parts Tested ILM
  • High Input Impedance
  • Tightened Parameter Distribution
  • Short Circuit Ruggedness > 5 ms @ 25°C
  • These Devices are Pb-Free and are RoHS Compliant