MJE253G Description
plementary Silicon Power Plastic Transistors MJE243G (NPN), MJE253G (PNP) These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
MJE253G Key Features
- High Collector-Emitter Sustaining Voltage
- High DC Current Gain
- Low Collector-Emitter Saturation Voltage
- High Current Gain Bandwidth Product
- Annular Construction for Low Leakages
- These Devices are Pb-Free and are RoHS pliant
- Continuous Collector Current
- Peak Base Current Total Power Dissipation
- For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mount
- Rev. 17
MJE253G Applications
- For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERR