NCP51810 Description
High Speed Half-Bridge Driver for GaN Power Switches NCP51810 The NCP51810 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT), gallium nitrade (GaN) power switches in medium−voltage half−bridge DC−DC application. The NCP51810 offers short and matched propagation delays with advanced level shift technology providing...
NCP51810 Key Features
- 150 V, Integrated High-Side and Low-Side Gate Drivers
- UVLO Protections for VDD High and Low-Side Drivers
- Dual TTL patible Schmitt Trigger Inputs
- Split Output Allows Independent Turn-ON/Turn-OFF Adjustment
- Source Capability: 1 A; Sink Capability: 2 A
- Separated HO and LO Driver Output Stages
- 1 ns Rise and Fall Times Optimized for GaN Devices
- SW and PGND: Negative Voltage Transient up to 3.5 V
- 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
- Maximum Propagation Delay of Less Than 50 ns