NDS351AN Overview
Key Features
- 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.5 V
- Ultra-Low gate charge
- High performance trench technology for extremely low RDS(ON) D D S SuperSOT TM-3 G
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| NDS351AN | Fairchild Semiconductor | N-Channel MOSFET |
| NDS351N | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS352AP | Kexin Semiconductor | P-Channel MOSFET |
| NDS352AP | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS355AN | Fairchild Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor |