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OSG65R900DF - Enhancement Mode N-Channel Power MOSFET

Download the OSG65R900DF datasheet PDF. This datasheet also covers the OSG65R900AF variant, as both devices belong to the same enhancement mode n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

VDS, min@Tjmax ID, pulse RDS(ON

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OSG65R900AF-OrientalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OSG65R900DF
Manufacturer Oriental Semiconductor
File Size 908.50 KB
Description Enhancement Mode N-Channel Power MOSFET
Datasheet download datasheet OSG65R900DF Datasheet

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Other Datasheets by Oriental Semiconductor

Part Number Description
OSG65R900D Enhancement Mode N-Channel Power MOSFET
OSG65R900 Enhancement Mode N-Channel Power MOSFET
OSG65R900A Enhancement Mode N-Channel Power MOSFET
OSG65R900AF Enhancement Mode N-Channel Power MOSFET
OSG65R900FF Enhancement Mode N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 700 V 15 A 900 mΩ 7.