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OSG65R900DF - Enhancement Mode N-Channel Power MOSFET

This page provides the datasheet information for the OSG65R900DF, a member of the OSG65R900AF Enhancement Mode N-Channel Power MOSFET family.

Description

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

VDS, min@Tjmax ID, pulse RDS(ON

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Datasheet Details

Part number OSG65R900DF
Manufacturer Oriental Semiconductor
File Size 908.50 KB
Description Enhancement Mode N-Channel Power MOSFET
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, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 700 V 15 A 900 mΩ 7.
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