PJP75N06 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@30A=13mΩ - RDS(ON), VGS@4.5V,IDS@30A=18mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for Converters and Power Motor Controls - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet Ro HS environment substance directive request MECHANICALDATA - Case: TO-220 Molded Plastic - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : P75N06 Drain PIN Assignment Gate 1. Gate 2. Drain 3. Source Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RθJC RθJA Li mi t 60 +20 75 350 105 6 2 .5 -5 5 to + 1 5 0 400 1 .2 62 U ni t s V V A A W M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=40A, VDD=25V, L=0.5m H Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C m J C /W C /W Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 3 0 V , ID = 3 0 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r...