RB411D
RB411D is Schottky Barrier Diode manufactured by PanJit Semiconductor.
FEATURES
High Reliability
Low Reverse Current
Ultra High-speed Switching
MECHANICAL DATA
Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D
500m A
ABSOLUTE RATINGS (TA=25 )
Parameter Reverse Voltage Average Rectified Forward Current Forward Current Surge Peak (t=8.3ms) Junction Temperature Storage Temperature
Symbol VRM IO IFSM TJ TSTG
Value 40 500 3 125
-40 to +125
Units V m A A
8/02/2006
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ELECTRICAL CHARACTERISTICS (TA=25 )
Parameter
Symbol Min. Typ. Max. Units
Conditions
Forward Voltage
- - 0.5 V IF= 500m A
- 0.3 V IF= 10m A
Reverse Current
- - 30 u A VR= 10V
Junction Capacitance
- 16
- p F VR= 10V, f=1MHz
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ELECTRICAL CHARACTERISTICS CURVE
Fig. 1. Typical Forward Voltage
Fig. 2. Typical Reverse Current
8/02/2006
Fig. 3. Typical Operating Temperature Derating
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