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2SA1816 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • q High collector to emitter voltage VCEO. 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 0.7±0.1 Ratings.
  • 150.
  • 150.
  • 5.
  • 100.
  • 50 300 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3.

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Datasheet Details

Part number 2SA1816
Manufacturer Panasonic Semiconductor
File Size 21.89 KB
Description Silicon PNP epitaxial planer type Transistor
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Full PDF Text Transcription

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Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification 4.0±0.2 3.0±0.2 Unit: mm s Features q High collector to emitter voltage VCEO. 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) 0.7±0.1 Ratings –150 –150 –5 –100 –50 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.
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