The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB0968 (2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1295 ■ Features
• Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC
Unit: mm
6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1
7.3±0.1
1.8±0.1
0.8 max.
2.5±0.1
2 1 4.6±0.1 3
0.75±0.1 2.3±0.1
1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.DataSheet4U.