2SB1172 Description
Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification plementary to 2SD1742, 2SD742A.
2SB1172 Key Features
- High forward current transfer ratio hFE which has satisfactory linearity
- Low collector-emitter saturation voltage VCE(sat)
- I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ
- Electrical Characteristics TC = 25°C ± 3°C
- Symbol 2SB1172 2SB1172A VBE ICES ICEO VCEO
- 0.375 A VCE = -10 V, IC =
- 0.5 A, f = 10 MHz IC = -1 A, IB1 =
- 0.1 A, IB2 = 0.1 A VCC = -50 V